? semiconductor components industries, llc, 2001 september, 2001 rev. 3 1 publication order number: 2n5457/d 2n5457, 2n5458 2n5457 and 2n5458 are preferred devices jfets - general purpose nchannel depletion nchannel junction field effect transistors, depletion mode (type a) designed for audio and switching applications. ? nchannel for higher gain ? drain and source interchangeable ? high ac input impedance ? high dc input resistance ? low transfer and input capacitance ? low crossmodulation and intermodulation distortion ? unibloc plastic encapsulated package maximum ratings rating symbol value unit drainsource voltage v ds 25 vdc draingate voltage v dg 25 vdc reverse gatesource voltage v gsr 25 vdc gate current i g 10 madc total device dissipation @ t a = 25 c derate above 25 c p d 310 2.82 mw mw/ c operating junction temperature t j 135 c storage temperature range t stg 65 to +150 c device package shipping ordering information 2n5457 to92 to92 case 29 style 5 5000 units/box 3 2 1 preferred devices are recommended choices for future use and best overall value. 2n5458 to92 5000 units/box y = year ww = work week marking diagrams 2n 5457 yww 2n 5458 yww http://onsemi.com 1 drain 2 source 3 gate
2n5457, 2n5458 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min min max unit off characteristics gatesource breakdown voltage (i g = 10 m adc, v ds = 0) v (br)gss 25 25 vdc gate reverse current (v gs = 15 vdc, v ds = 0) (v gs = 15 vdc, v ds = 0, t a = 100 c) i gss 1.0 200 nadc gatesource cutoff voltage 2n5457 (v ds = 15 vdc, i d = 1 nadc) 2n5458 v gs(off) 1.0 2.0 6.0 7.0 vdc gatesource voltage (v ds = 15 vdc, i d = 100 m adc) 2n5457 (v ds = 15 vdc, i d = 200 m adc) 2n5458 v gs 2.5 3.5 6.0 7.0 vdc on characteristics zerogatevoltage drain current (note 1.) 2n5638 (v ds = 20 vdc, v gs = 0) 2n5639 i dss 1.0 2.0 3.0 6.0 5.0 9.0 madc dynamic characteristics forward transfer admittance (note 1.) 2n5638 (v ds = 15 vdc, v gs = 0, f = 1 khz) 2n5639 |y fs | 1000 1500 3000 4000 5000 5500 m mhos forward transfer admittance (note 1.) (v ds = 15 vdc, v gs = 0, f = 1 khz) |y os | 10 50 m mhos input capacitance (v ds = 15 vdc, v gs = 0, f = 1 khz) c iss 4.5 7.0 pf reverse transfer capacitance (v ds = 15 vdc, v gs = 0, f = 1 khz) c rss 1.5 3.0 pf 1. pulse width 630 ms, duty cycle 10%. r s , source resistance (megohms) figure 1. noise figure versus source resistance v ds , drain-source voltage (volts) figure 2. typical drain characteristics v gs , gate-source voltage (volts) figure 3. common source transfer characteristics 14 1.0 0.4 0.2 0 12 10 8 6 4 2 -1.2 0.8 0.6 0 5 10 15 20 25 0 0.6 0.4 0.2 0.8 1.2 1.0 -0.8 -0.4 0 1.2 0 , drain current (ma) d i , drain current (ma) d i nf, noise figure (db) 0.001 0.01 0.1 1.0 10 v ds = 15 v v gs = 0 f = 1 khz v ds = 15 v v gs = 0 v -0.2 v -0.4 v -0.6 v -0.8 v -1.0 v v gs(off) -1.2 v v gs(off) -1.2 v
2n5457, 2n5458 http://onsemi.com 3 v ds , drain-source voltage (volts) figure 4. typical drain characteristics v gs , gate-source voltage (volts) figure 5. common source transfer characteristics v ds , drain-source voltage (volts) figure 6. typical drain characteristics v gs , gate - source voltage (volts) figure 7. common source transfer characteristics 0 0 4 3 2 1 0 10 4 2 0 -4 5 510152025 5 4 3 2 1 0 -7 8 6 -6 -5 -4 -3 -2 -1 -5 -3 -2 -1 0 , drain current (ma) d i v ds = 15 v v gs(off) -5.8 v , drain current (ma) d i , drain current (ma) d i , drain current (ma) d i v ds = 15 v 10 4 2 0 8 6 0 5 10 15 20 25 v gs(off) -5.8 v v gs = 0 v v gs = 0 v -2 v -1 v -3 v -1 v -2 v -3 v -4 v -5 v v gs(off) -3.5 v v gs(off) -3.5 v note: note: graphical data is presented for dc conditions. tabular data is given for pulsed conditions (pulse width = 630 ms, duty cycle = 10%). under dc conditions, self heating in higher i dss units reduces i dss .
2n5457, 2n5458 http://onsemi.com 4 package dimensions case 2911 issue al to92 (to226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 2n5457/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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